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BUK7535-100A; buk7635-100a trenchmos? standard level fet rev. 01 02 february 2001 product speci?cation c c 1. description n-channel enhancement mode ?eld-effect power transistor in a plastic package using trenchmos? technology, featuring very low on-state resistance. product availability: BUK7535-100A in sot78 (to-220ab) buk7635-100a in sot404 (d 2 -pak). 2. features n trenchmos? technology n q101 compliant n 175 c rated n standard level compatible. 3. applications n automotive and general purpose power switching: u 12 v, 24 v and 42 v loads u motors, lamps and solenoids. 4. pinning information table 1: pinning - sot78 and sot404, simpli?ed outline and symbol pin description simpli?ed outline symbol 1 gate (g) sot78 (to-220ab) sot404 (d 2 -pak) 2 drain (d) 3 source (s) mb mounting base; connected to drain (d) mbk106 12 mb 3 13 2 mbk116 mb s d g mbb076
philips semiconductors BUK7535-100A; buk7635-100a trenchmos? standard level fet product speci?cation rev. 01 02 february 2001 2 of 15 9397 750 07829 ? philips electronics n.v. 2001. all rights reserved. 5. quick reference data 6. limiting values table 2: quick reference data symbol parameter conditions typ max unit v ds drain-source voltage (dc) - 100 v i d drain current (dc) t mb =25 c; v gs =10v - 41 a p tot total power dissipation t mb =25 c - 149 w t j junction temperature - 175 c r dson drain-source on-state resistance v gs = 10 v; i d =25a t j =25 c2135 m w t j = 175 c - 88 m w table 3: limiting values in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit v ds drain-source voltage (dc) - 100 v v dgr drain-gate voltage (dc) r gs =20k w- 100 v v gs gate-source voltage (dc) - 20 v i d drain current (dc) t mb =25 c; v gs =10v; figure 2 and 3 - 41 a t mb = 100 c; v gs =10v; figure 2 - 29 a i dm peak drain current t mb =25 c; pulsed; t p 10 m s; figure 3 - 165 a p tot total power dissipation t mb =25 c; figure 1 - 149 w t stg storage temperature - 55 +175 c t j operating junction temperature - 55 +175 c source-drain diode i dr reverse drain current (dc) t mb =25 c - 41 a i drm pulsed reverse drain current t mb =25 c; pulsed; t p 10 m s - 165 a avalanche ruggedness w dss non-repetitive avalanche energy unclamped inductive load; i d =25a; v ds 100 v; v gs =10v; r gs =50 w ; starting t mb =25 c - 110 mj
philips semiconductors BUK7535-100A; buk7635-100a trenchmos? standard level fet product speci?cation rev. 01 02 february 2001 3 of 15 9397 750 07829 ? philips electronics n.v. 2001. all rights reserved. v gs 3 4.5 v fig 1. normalized total power dissipation as a function of mounting base temperature. fig 2. normalized continuous drain current as a function of mounting base temperature. t mb =25 c; i dm single pulse. fig 3. safe operating area; continuous and peak drain currents as a function of drain-source voltage. 03na19 0 20 40 60 80 100 120 0 25 50 75 100 125 150 175 200 p der t mb ( o c) (%) 03aa24 0 20 40 60 80 100 120 0 25 50 75 100 125 150 175 200 i der (%) t mb ( o c) p der p tot p tot 25 c () ---------------------- 100 % = i der i d i d25c () ------------------ - 100 % = 03nd36 1 10 10 2 10 3 1 10 10 2 10 3 v ds (v) i d (a) d.c. 100 ms 10 ms r dson = v ds / i d 1 ms t p = 10 us 100 us t p t p t p t t d =
philips semiconductors BUK7535-100A; buk7635-100a trenchmos? standard level fet product speci?cation rev. 01 02 february 2001 4 of 15 9397 750 07829 ? philips electronics n.v. 2001. all rights reserved. 7. thermal characteristics 7.1 transient thermal impedance table 4: thermal characteristics symbol parameter conditions value unit r th(j-a) thermal resistance from junction to ambient vertical in still air; sot78 package 60 k/w mounted on printed circuit board; minimum footprint; sot404 package 50 k/w r th(j-mb) thermal resistance from junction to mounting base figure 4 1.0 k/w fig 4. transient thermal impedance from junction to mounting base as a function of pulse duration. 03nd37 single shot 0.2 0.1 0.05 0.02 10 -3 10 -2 10 -1 1 10 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 1 t p (s) z th(j-mb) (k/w) d = 0.5 t p t p t p t t d =
philips semiconductors BUK7535-100A; buk7635-100a trenchmos? standard level fet product speci?cation rev. 01 02 february 2001 5 of 15 9397 750 07829 ? philips electronics n.v. 2001. all rights reserved. 8. characteristics table 5: characteristics t j =25 c unless otherwise speci?ed symbol parameter conditions min typ max unit static characteristics v (br)dss drain-source breakdown voltage i d = 0.25 ma; v gs =0v t j =25 c 100 -- v t j = - 55 c89 -- v v gs(th) gate-source threshold voltage i d = 1 ma; v ds =v gs ; figure 9 t j =25 c234v t j = 175 c1 -- v t j = - 55 c -- 4.4 v i dss drain-source leakage current v ds = 100 v; v gs =0v t j =25 c - 0.05 10 m a t j = 175 c -- 500 m a i gss gate-source leakage current v gs = 20 v; v ds =0v - 2 100 na r dson drain-source on-state resistance v gs =10v; i d =25a; figure 7 and 8 t j =25 c - 21 35 m w t j = 175 c -- 88 m w dynamic characteristics c iss input capacitance v gs =0v; v ds =25v; f = 1 mhz; figure 12 - 1900 2535 pf c oss output capacitance - 250 301 pf c rss reverse transfer capacitance - 150 205 pf t d(on) turn-on delay time v dd = 30 v; r l = 1.2 w ; v gs =10v; r g =10 w ; - 15 - ns t r rise time - 67 - ns t d(off) turn-off delay time - 56 - ns t f fall time - 35 - ns l d internal drain inductance from drain lead 6 mm from package to centre of die - 4.5 - nh from contact screw on mounting base to centre of die sot78 - 3.5 - nh from upper edge of drain mounting base to centre of die sot404 - 2.5 - nh l s internal source inductance from source lead to source bond pad - 7.5 - nh
philips semiconductors BUK7535-100A; buk7635-100a trenchmos? standard level fet product speci?cation rev. 01 02 february 2001 6 of 15 9397 750 07829 ? philips electronics n.v. 2001. all rights reserved. source-drain diode v sd source-drain (diode forward) voltage i s = 25 a; v gs =0v; figure 15 - 0.85 1.2 v t rr reverse recovery time i s =20a;di s /dt = - 100 a/ m s v gs = - 10 v; v ds =30v - 67 - ns q r recovered charge - 220 - nc table 5: characteristics continued t j =25 c unless otherwise speci?ed symbol parameter conditions min typ max unit t j =25 c; t p = 300 m st j =25 c; i d =25a fig 5. output characteristics: drain current as a function of drain-source voltage; typical values. fig 6. drain-source on-state resistance as a function of gate-source voltage; typical values. t j =25 c fig 7. drain-source on-state resistance as a function of drain current; typical values. fig 8. normalized drain-source on-state resistance factor as a function of junction temperature. 03nd33 0 20 40 60 80 100 120 140 0246810 v ds (v) i d (a) v gs (v) = 4.5 5.5 6.5 7.5 20 10 8 9 03nd32 20 25 30 35 5101520 v gs (v) r dson (m w ) 03nd34 0 20 40 60 80 0 50 100 150 i d (a) r dson (m w ) v gs (v) = 10 8 7 6.5 6 5.5 03aa29 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 2.8 3 -60 -20 20 60 100 140 180 t j ( o c) a a r dson r dson 25 c () ---------------------------- =
philips semiconductors BUK7535-100A; buk7635-100a trenchmos? standard level fet product speci?cation rev. 01 02 february 2001 7 of 15 9397 750 07829 ? philips electronics n.v. 2001. all rights reserved. i d = 1 ma; v ds =v gs t j =25 c; v ds =v gs fig 9. gate-source threshold voltage as a function of junction temperature. fig 10. sub-threshold drain current as a function of gate-source voltage. t j =25 c; v ds =25v v gs = 0 v; f = 1 mhz fig 11. forward transconductance as a function of drain current; typical values. fig 12. input, output and reverse transfer capacitances as a function of drain-source voltage; typical values. 03aa32 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 -60 -20 20 60 100 140 180 v gs(th) t j ( o c) (v) max. typ. min 03aa35 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 012345 max typ min v gs (v) i d (a) 03nd30 0 5 10 15 20 25 30 35 0204060 i d (a) g fs (s) 03nd35 0 500 1000 1500 2000 2500 3000 3500 4000 4500 10 -2 10 -1 1 10 10 2 v ds (v) c (pf) ciss coss crss
philips semiconductors BUK7535-100A; buk7635-100a trenchmos? standard level fet product speci?cation rev. 01 02 february 2001 8 of 15 9397 750 07829 ? philips electronics n.v. 2001. all rights reserved. v ds =25v t j =25 c; i d =25a fig 13. transfer characteristics: drain current as a function of gate-source voltage; typical values. fig 14. gate-source voltage as a function of turn-on gate charge; typical values. v gs =0v fig 15. reverse diode current as a function of reverse diode voltage; typical values. 03nd31 0 10 20 30 40 50 02468 v gs (v) i d (a) t j = 175 o c t j = 25 o c 03nd29 0 2 4 6 8 10 0204060 q g (nc) v gs (v) v dd = 80v v dd = 14v 03nd28 0 20 40 60 0.0 0.5 1.0 1.5 v sd (v) i s (a) t j = 25 o c t j = 175 o c
philips semiconductors BUK7535-100A; buk7635-100a trenchmos? standard level fet product speci?cation rev. 01 02 february 2001 9 of 15 9397 750 07829 ? philips electronics n.v. 2001. all rights reserved. 9. package outline fig 16. sot78 (to-220ab). references outline version european projection issue date iec jedec eiaj sot78 sc-46 3-lead to-220ab d d 1 q p l 123 l 2 (1) b 1 e e b 0 5 10 mm scale plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead to-220ab sot78 dimensions (mm are the original dimensions) a e a 1 c note 1. terminals in this zone are not tinned. q l 1 unit a 1 b 1 d 1 e p mm 2.54 qq a b d c l 2 (1) max. 3.0 3.8 3.6 15.0 13.5 3.30 2.79 3.0 2.7 2.6 2.2 0.7 0.4 15.8 15.2 0.9 0.7 1.3 1.0 4.5 4.1 1.39 1.27 6.4 5.9 10.3 9.7 l 1 e l 99-09-13 00-09-07 mounting base
philips semiconductors BUK7535-100A; buk7635-100a trenchmos? standard level fet product speci?cation rev. 01 02 february 2001 10 of 15 9397 750 07829 ? philips electronics n.v. 2001. all rights reserved. fig 17. sot404 (d 2 -pak). unit a references outline version european projection issue date iec jedec eiaj mm a 1 d 1 d max. e el p h d q c 2.54 2.60 2.20 15.40 14.80 2.90 2.10 11 1.60 1.20 10.30 9.70 4.50 4.10 1.40 1.27 0.85 0.60 0.64 0.46 b dimensions (mm are the original dimensions) sot404 0 2.5 5 mm scale plastic single-ended surface mounted package (philips version of d 2 -pak); 3 leads (one lead cropped) sot404 e e e b d 1 h d d q l p c a 1 a 13 2 mounting base 98-12-14 99-06-25
philips semiconductors BUK7535-100A; buk7635-100a trenchmos? standard level fet product speci?cation rev. 01 02 february 2001 11 of 15 9397 750 07829 ? philips electronics n.v. 2001. all rights reserved. 10. soldering dimensions in mm. fig 18. re?ow soldering footprint for sot404. handbook, full pagewidth msd057 solder lands solder resist occupied area solder paste 10.50 7.40 7.50 1.50 1.70 10.60 1.20 1.30 1.55 5.08 10.85 0.30 2.15 8.35 2.25 4.60 0.20 3.00 4.85 7.95 8.15 8.075 8.275 5.40 1.50
philips semiconductors BUK7535-100A; buk7635-100a trenchmos? standard level fet product speci?cation rev. 01 02 february 2001 12 of 15 9397 750 07829 ? philips electronics n.v. 2001. all rights reserved. 11. revision history table 6: revision history rev date cpcn description 01 20010202 - product speci?cation; initial version
philips semiconductors BUK7535-100A; buk7635-100a trenchmos? standard level fet product speci?cation rev. 01 02 february 2001 13 of 15 9397 750 07829 ? philips electronics n.v. 2001 all rights reserved. 12. data sheet status [1] please consult the most recently issued data sheet before initiating or completing a design. 13. de?nitions short-form speci?cation the data in a short-form speci?cation is extracted from a full data sheet with the same type number and title. for detailed information see the relevant data sheet or data handbook. limiting values de?nition limiting values given are in accordance with the absolute maximum rating system (iec 60134). stress above one or more of the limiting values may cause permanent damage to the device. these are stress ratings only and operation of the device at these or at any other conditions above those given in the characteristics sections of the speci?cation is not implied. exposure to limiting values for extended periods may affect device reliability. application information applications that are described herein for any of these products are for illustrative purposes only. philips semiconductors make no representation or warranty that such applications will be suitable for the speci?ed use without further testing or modi?cation. 14. disclaimers life support these products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. philips semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify philips semiconductors for any damages resulting from such application. right to make changes philips semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. philips semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise speci?ed. datasheet status product status de?nition [1] objective speci?cation development this data sheet contains the design target or goal speci?cations for product development. spec i?cation may change in any manner without notice. preliminary speci?cation quali?cation this data sheet contains preliminary data, and supplementary data will be published at a la ter date. philips semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product. product speci?cation production this data sheet contains ?nal speci?cations. philips semiconductors reserves the right to make ch anges at any time without notice in order to improve design and supply the best possible product.
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? philips electronics n.v. 2001. printed in the netherlands all rights are reserved. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. no liability will be accepted by the publisher for any consequence of its use. publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. date of release: 02 february 2001 document order number: 9397 750 07829 contents philips semiconductors BUK7535-100A; buk7635-100a trenchmos? standard level fet 1 description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 2 features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 3 applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 4 pinning information . . . . . . . . . . . . . . . . . . . . . . 1 5 quick reference data . . . . . . . . . . . . . . . . . . . . . 2 6 limiting values . . . . . . . . . . . . . . . . . . . . . . . . . . 2 7 thermal characteristics . . . . . . . . . . . . . . . . . . . 4 7.1 transient thermal impedance . . . . . . . . . . . . . . 4 8 characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 9 package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 10 soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 11 revision history . . . . . . . . . . . . . . . . . . . . . . . . 12 12 data sheet status . . . . . . . . . . . . . . . . . . . . . . . 13 13 definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 14 disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

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